Advanced technocracy inc. Is manufacturer, exporter & supplier of Determination of Energy Band Gap in Semiconductor Diode
Experimental Training Board has been designed specifically for Determination of Energy Band Gap in Semiconductor Diode (P-N Junction Diode) using Temperature dependent of reverse saturation current. The board is absolutely self contained and requires no other apparatus. Practical experience on this board carries great educative value for Science and Engineering Students.
To draw the characteristics of a P-N junction Diode for reverse saturation current and temperature
To determine the Energy Band Gap in a P-N Junction Diode
2V D.C. at 10mA, regulated Power Supply
Digital Microammeter, 3½ digits having range 200mA D.C.
Thermometer 0-110 °C
Oven, Electrically heated to heat the Semiconductor Diode
Mains ON/OFF switch and Fuse
The unit is operative on 230V ±10% at 50Hz A.C. Mains
Adequate no. of patch cords stackable from rear both ends 4mm spring loaded plug length ½ metre
Good Quality, reliable terminal/sockets are provided at appropriate places on panel for connections /observation of waveforms
Strongly supported by detailed Operating Instructions, giving details of Object, Theory, Design procedures, Report Suggestions and Book Reference.